PSMN2R7-30PL NXP Semiconductors, PSMN2R7-30PL Datasheet - Page 7

• Manufacturer Part Number: PSMN2R7-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN2R7-30PL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
Measured 3 mm from package.
(A)
I
120
D
90
60
30
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
10
4.5
3.5
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
1
…continued
2
V
GS
V
All information provided in this document is subject to legal disclaimers.
DS
003aad404
(V) = 3
(V)
2.8
2.6
2.4
Conditions
V
R
I
see
I
V
Rev. 02 — 2 November 2010
S
S
DS
GS
G(ext)
3
= 15 A; V
= 25 A; dI
Figure 17
= 12 V; R
= 0 V; V
= 4.7 Ω
GS
S
DS
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
/dt = -100 A/µs;
L
= 0 V; T
Fig 6.
= 0.5 Ω; V
= 12 V
100
(A)
I
80
60
40
20
D
j
0
= 25 °C;
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
GS
= 4.5 V;
1
T
j
= 175 °C
PSMN2R7-30PL
Min
-
-
-
-
-
-
-
2
Typ
46
82
74
35
0.7
40
33
T
j
= 25 °C
3
© NXP B.V. 2010. All rights reserved.
003aad406
V
GS
-
Max
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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