PSMN2R7-30PL NXP Semiconductors, PSMN2R7-30PL Datasheet - Page 8

• Manufacturer Part Number: PSMN2R7-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN2R7-30PL
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
(pF)
8000
6000
4000
2000
C
DSon
10
8
6
4
2
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
0
0
5
3
10
6
15
9
All information provided in this document is subject to legal disclaimers.
V
003aad410
003aad412
V
GS
GS
(V)
(V)
C
C
iss
rss
Rev. 02 — 2 November 2010
12
20
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S)
g
10
10
10
10
10
10
180
150
120
(A)
I
fs
90
60
30
D
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
25
min
1
PSMN2R7-30PL
50
typ
2
75
© NXP B.V. 2010. All rights reserved.
V
GS
003aad411
003aab271
I
D
max
(V)
(A)
100
3
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