PSMN2R7-30PL NXP Semiconductors, PSMN2R7-30PL Datasheet - Page 9

• Manufacturer Part Number: PSMN2R7-30PL
• Description: MOSFET,N CH,30V,100A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30PL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN2R7-30PL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003a a c982
T
T
j
j
(°C)
( ° C)
03aa27
Rev. 02 — 2 November 2010
180
180
N-channel 30 V 2.7 mΩ logic level MOSFET in TO-220
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
10
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
V
GS
20
Q
(V) = 2.8
GS1
I
Q
D
PSMN2R7-30PL
GS
40
Q
GS2
Q
G(tot)
60
4.5
Q
GD
© NXP B.V. 2010. All rights reserved.
80
003aaa508
003aad405
I
D
3
(A)
3.5
10
100
9 of 15