PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 4

• Manufacturer Part Number: PSMN3R3-40YS
• Description: MOSFET,N CH,40V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R3-40YS
Product data sheet
Fig 3.
(A)
I
10
D
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
3
2
1
10
-1
Limit R
1
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/ I
Rev. 04 — 25 October 2010
D
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
10
DC
t
100 ms
100 μ s
1 ms
10 ms
p
=10 μ s
PSMN3R3-40YS
10
2
V
DS
© NXP B.V. 2010. All rights reserved.
(V)
003aae209
10
3
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