PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 9

• Manufacturer Part Number: PSMN3R3-40YS
• Description: MOSFET,N CH,40V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN3R3-40YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
20
15
10
10
5
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
25
8V
20
V
GS
50
(V) = 5.5
40
V
DS
75
Q
= 20V
All information provided in this document is subject to legal disclaimers.
G
003aae216
003aae218
I
D
(nC)
(A)
10
20
8
Rev. 04 — 25 October 2010
6
100
60
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN3R3-40YS
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aae215
(V)
C
C
C
iss
oss
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10
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