SI8401DB-T1-E1 Vishay, SI8401DB-T1-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8401DB-T1-E1
• Description: P CH MOSFET, -20V, 4.9A, MICRO FOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8401DB-T1-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 95mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Power - Max: 1.47W
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI8401DB-T1-E1TR

Si8401DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10 -
10 -
4
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
Threshold Voltage
T
I
D
J
= 250 µA
- Temperature (°C)
25
10 -
Single Pulse
3
50
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10 -
2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
150
10 -
2
10 -
1
10 -
80
60
40
20
1
0
0.001
1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
Time (s)
T
t
1
A
1
0.1
= P
S-82118-Rev. H, 08-Sep-08
t
2
Document Number: 71674
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 72 °C/W
1
600
10
10