SUD50N03-10CP-T1-E3 Vishay, SUD50N03-10CP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-10CP-T1-E3
• Description: N CHANNEL MOSFET, 30V, 62A
• Manufacturer: Vishay

Specifications of SUD50N03-10CP-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 71W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71791
S-31724—Rev. D, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2500
2000
1500
1000
100
500
50
40
30
20
10
80
60
40
20
0
0
0
0
0
0
V
GS
10
2
V
6
V
= 10 thru 4 V
DS
DS
Output Characteristics
I
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
D
Transconductance
- Drain Current (A)
Capacitance
20
12
4
C
C
C
oss
iss
rss
30
18
6
T
C
3 V
40
24
= - 55_C
8
125_C
25_C
10
50
30
0.015
0.012
0.009
0.006
0.003
0.000
50
40
30
20
10
10
0
8
6
4
2
0
0.0
0
0
V
I
D
0.5
DS
5
= 15 A
On-Resistance vs. Drain Current
= 15 V
10
V
GS
1.0
10
Q
Transfer Characteristics
g
- Gate-to-Source Voltage (V)
I
V
D
- Total Gate Charge (nC)
GS
1.5
SUD50N03-10CP
- Drain Current (A)
15
Gate Charge
20
= 4.5 V
T
C
25_C
= 125_C
Vishay Siliconix
2.0
20
30
2.5
25
V
GS
3.0
30
= 10 V
www.vishay.com
40
- 55_C
3.5
35
4.0
50
40
3