SUD50N03-10CP-T1-E3 Vishay, SUD50N03-10CP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-10CP-T1-E3
• Description: N CHANNEL MOSFET, 30V, 62A
• Manufacturer: Vishay

Specifications of SUD50N03-10CP-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 71W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N03-10CP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
0.01
0.1
25
20
15
10
2.00
1.75
1.50
1.25
1.00
0.75
0.50
5
0
2
1
10
0
-4
- 50
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Maximum Avalanche Drain Current
25
On-Resistance vs. Junction Temperature
V
I
Single Pulse
- 25
D
GS
= 15 A
= 10 V
vs. Ambient Temperature
T
T
0
50
A
J
- Case Temperature (_C)
- Junction Temperature (_C)
10
25
-3
75
50
100
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
125
10
-2
125
150
150
Square Wave Pulse Duration (sec)
175
175
10
-1
1000
0.01
1
100
0.1
10
50
10
1
1
0.1
0
by r
Limited
Source-Drain Diode Forward Voltage
T
DS(on)
J
V
= 150_C
0.3
V
DS
SD
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
- Source-to-Drain Voltage (V)
A
Notes:
P
1
= 25_C
DM
JM
- T
0.6
A
t
1
= P
t
2
DM
S-31724—Rev. D, 18-Aug-03
Z
thJA
0.9
thJA
Document Number: 71791
100
10
t
t
(t)
1
2
T
= 40_C/W
J
= 25_C
1.2
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
600
100
1.5