SUM110N04-03L-T1-E3 Vishay, SUM110N04-03L-T1-E3 Datasheet
SUM110N04-03L-T1-E3
Specifications of SUM110N04-03L-T1-E3
Related parts for SUM110N04-03L-T1-E3
SUM110N04-03L-T1-E3 Summary of contents
Page 1
... Top View SUB85N04-03 Symbol 125 0 (TO-263 stg Symbol d PCB Mount (TO-263 thJA thJA Free Air (TO-220AB) R thJC SUP/SUB85N04-03 Vishay Siliconix N-Channel MOSFET Limit Unit 240 75 280 mJ c 250 W W 3.75 –55 to 175 C Limit Unit 40 C/W C/W 62.5 0.6 www.vishay.com FaxBack 408-970-5600 2-1 ...
Page 2
... Pulsed Current a Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Notes a. Pulse test; pulse width 300 s, duty cycle b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 New Product Symbol Test Condition 250 A (BR)DSS ...
Page 3
... C 0.004 0.002 0 80 100 SUP/SUB85N04-03 Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 100 120 I – Drain Current (A) D Gate Charge = 120 180 240 300 Q – Total Gate Charge (nC) g www.vishay.com FaxBack 408-970-5600 2-3 ...
Page 4
... T – Junction Temperature ( C) J Avalanche Current vs. Time 1000 100 150 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com FaxBack 408-970-5600 2-4 New Product Source-Drain Diode Forward Voltage 100 10 1 125 150 175 250 –50 –25 0 150 0.3 ...
Page 5
... Document Number: 71124 S-00654—Rev. B, 27-Mar-00 New Product 1000 100 10 1 0.1 150 175 0 –2 – Square Wave Pulse Duration (sec) SUP/SUB85N04-03 Vishay Siliconix Safe Operating Area 10 s 100 s Limited DS(on 100 Single Pulse 1 10 100 – Drain-to-Source Voltage ( www.vishay.com FaxBack 408-970-5600 2-5 ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...