MCO 100-12IO1 IXYS SEMICONDUCTOR, MCO 100-12IO1 Datasheet
MCO 100-12IO1
Manufacturer Part Number
MCO 100-12IO1
Description
THYRISTOR, 100A, 1200V
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.MCO_100-12IO1.pdf
(2 pages)
Specifications of MCO 100-12IO1
Peak Repetitive Off-state Voltage, Vdrm
1200V
Gate Trigger Current Max, Igt
100mA
Current It Av
99A
On State Rms Current It(rms)
156A
Holding Current Max Ih
200mA
Gate Trigger Voltage Max Vgt
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Single Thyristor Module
Preliminary data
Symbol
I
I
I
I
(di/dt)
(dv/dt)
P
P
V
T
T
T
V
M
Weight
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, Conditions and dimensions.
© 2006 IXYS All rights reserved
1200
1600
V
V
TRMS
TAV
TSM
2
t
VJ
VJM
stg
GM
GAVM
RGM
ISOL
d
V
RSM
DSM
cr
cr
1200
1600
V
V
RRM
DRM
V
Conditions
T
T
T
V
T
V
T
V
T
V
T
f = 50 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS;
Mounting torque (M4)
Terminal connection torque (M4)
typ.
G
T
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= I
= 0.3 A
/dt = 0.3 A/µs
= 80°C; (180° sine)
=
= 0
= 0
= 0
= 0
= T
= 45°C;
= T
= 45°C
= T
= T
= T
= T
= ∞; method 1 (linear voltage rise)
TAVM
2
/
3
VJM
VJM
VJM
VJM
VJM
VJM
V
MCO 50-12io1
MCO 50-16io1
Type
DRM
;
P
= 200 µs
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
V
t
t
I
p
p
ISOL
DR
=
= 300 µs
=
≤ 1 mA
30 µs
2
/
3
V
DRM
T
= 150 A
T
= I
TAVM
1.1 - 1.5 / 9 - 13 Nm/lb.in.
1.1 - 1.5 / 9 - 13 Nm/lb.in.
-40...+150
-40...+150
Maximum Ratings
2740
2700
2100
2100
1000
2500
740
800
650
700
100
500
150
0.5
85
54
10
10
30
5
G1 K2/4
A3
A/µs
A/µs
V/µs
A
A
A
A
V~
°C
°C
°C
W
W
W
A
A
A
A
A
A
V
g
2
2
2
2
s
s
s
s
I
V
I
miniBLOC, SOT-227 B
Features
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
•
TRMS
TAV
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
Planar passivated chips
Solid state switches
motor control
soft starter
light and temperature control
Easy to mount with two screws
Space and weight savings
Improved temperature and power cycling
High power density
RRM
= 85 A
= 1200-1600 V
= 54 A
G1
A3
K2
MCO 50
K4
1 - 2
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MCO 100-12IO1 Summary of contents
Page 1
Single Thyristor Module Preliminary data V V Type RSM RRM V V DSM DRM V V 1200 1200 MCO 50-12io1 1600 1600 MCO 50-16io1 Symbol Conditions TRMS VJ VJM 80°C; (180° sine) TAV ...
Page 2
Symbol Conditions 125° RRM / DRM VJ R RRM 50 25° For power-loss calculations only ...