PBRP113ZT NXP Semiconductors, PBRP113ZT Datasheet - Page 5

• Manufacturer Part Number: PBRP113ZT
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
PBRP113ZT_1
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
1
3
2
1
10
3
2
1
10
FR4 PCB, mounting pad for collector 1 cm
SOT23 (TO-236AB); typical values
Ceramic PCB, Al
SOT23 (TO-236AB); typical values
5
5
0.50
0.20
0.10
0.05
0.02
0.01
0.50
0.20
0.10
0.05
0.02
0.01
= 1
= 1
0
0
0.75
0.33
0.75
0.33
10
10
2
4
4
O
3
standard footprint
10
10
3
3
2
10
10
Rev. 01 — 16 January 2008
2
2
10
10
1
1
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
1
1
10
10
PBRP113ZT
10
10
2
2
© NXP B.V. 2008. All rights reserved.
t
t
p
p
006aab001
006aab002
(s)
(s)
10
10
3
3
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