PBRP113ZT NXP Semiconductors, PBRP113ZT Datasheet - Page 8

• Manufacturer Part Number: PBRP113ZT
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
8. Package outline
PBRP113ZT_1
Product data sheet
Fig 9. On-state input voltage as a function of collector
V
(1) T
(2) T
(3) T
(V)
I(on)
10
10
1
1
V
current; typical values
10
amb
amb
amb
CE
(1)
(2)
(3)
1
= 0.3 V
= 40 C
= 25 C
= 100 C
1
Fig 11. Package outline SOT23 (TO-236AB)
10
10
2
I
006aab083
C
(mA)
2.5
2.1
Dimensions in mm
Rev. 01 — 16 January 2008
10
1.4
1.2
3
1
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
Fig 10. Off-state input voltage as a function of collector
V
(1) T
(2) T
(3) T
(V)
I(off)
10
3.0
2.8
1.9
10
1
1
10
V
current; typical values
3
amb
amb
amb
CE
(1)
(2)
(3)
1
= 5 V
= 40 C
= 25 C
= 100 C
2
0.48
0.38
0.45
0.15
1
1.1
0.9
0.15
0.09
PBRP113ZT
04-11-04
10
I
© NXP B.V. 2008. All rights reserved.
C
(mA)
006aab084
10
2
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