PBRP113ZT NXP Semiconductors, PBRP113ZT Datasheet - Page 9

• Manufacturer Part Number: PBRP113ZT
• Description: TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -40V
• Power Dissipation Pd: 250mW
• Dc Collector Current: -600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Dc Current Gain Hfe: 320
• Rohs Compliant: Yes

NXP Semiconductors
9. Packing information
10. Soldering
PBRP113ZT_1
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
PBRP113ZT
Fig 12. Reflow soldering footprint SOT23 (TO-236AB)
Fig 13. Wave soldering footprint SOT23 (TO-236AB)
For further information and the availability of packing methods, see
4.60
3.00
Packing methods
4.00
0.85
0.85
1.20
SOT23
1.30
Rev. 01 — 16 January 2008
2
2
Description
4 mm pitch, 8 mm tape and reel
3.40
2.80
4.50
2.90
2.50
1.00
3.30
3
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
3
1.20 (2x)
0.50 (3x)
1
0.60 (3x)
1
0.60
(3x)
Dimensions in mm
preferred transport direction during soldering
sot023
2.70
Section
solder lands
solder resist
occupied area
[1]
Dimensions in mm
PBRP113ZT
13.
solder lands
solder resist
solder paste
occupied area
Packing quantity
3000
-215
© NXP B.V. 2008. All rights reserved.
sot023
10000
-235
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