SIA444DJT-T1-GE3 Vishay, SIA444DJT-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIA444DJT-T1-GE3
• Description: MOSFET,N CH,DIODE,30V,12A,SC70 PPAK
• Manufacturer: Vishay

Specifications of SIA444DJT-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiA444DJT
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted)
a
V
Symbol
This document is subject to change without notice.
R
V
V
GS(th)
I
t
t
t
t
I
I
C
V
GS(th)
D(on)
DS(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
g
R
SM
I
t
DS
t
t
DS
oss
t
t
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
New Product
I
F
V
I
V
V
V
I
= 8.8 A, dI/dt = 100 A/µs, T
D
D
DS
DS
DS
DS
 8.8 A, V
 8.8 A, V
= 30 V, V
= 15 V, V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
V
V
DS
DS
I
GS
DD
DD
GS
S
DS
DS
GS
DS
Test Conditions
= 8.8 A, V
= 0 V, V
= V
= 0 V, I
= 15 V, R
= 15 V, R
= 30 V, V
5 V, V
4.5 V, I
10 V, I
= 10 V, I
T
I
f = 1 MHz
D
GEN
C
GS
GEN
GS
GS
= 250 µA
GS
GS
= 25 °C
, I
= 0 V, T
= 4.5 V, I
= 4.5 V, R
D
GS
= 10 V, I
= 0 V, f = 1 MHz
= 10 V, R
D
GS
D
D
D
GS
= 250 µA
GS
L
L
= 250 µA
= ± 20 V
= 7.4 A
= 7.4 A
= 6.5 A
= 1.7 
= 1.7 
= 10 V
0 V
= 0 V
J
D
D
= 55 °C
g
g
J
= 11 A
= 11 A
= 1 
= 25 °C
= 1 
Min.
0.7
30
20
1
S11-0649-Rev. B, 11-Apr-11
0.014
0.017
Typ.
- 4.8
560
125
1.5
1.7
3.5
0.8
7.5
7.5
24
55
10
12
12
15
10
12
15
10
15
Document Number: 67056
34
5
7
6
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± 100
0.017
0.022
Max.
2.2
1.2
10
15
20
20
25
15
15
20
25
15
12
40
30
12
1
8
7
mV/°C
Unit
nA
µA
pF
nC
nC
ns
ns
ns


V
V
A
S
A
V