SIA444DJT-T1-GE3 Vishay, SIA444DJT-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA444DJT-T1-GE3
• Description: MOSFET,N CH,DIODE,30V,12A,SC70 PPAK
• Manufacturer: Vishay

Specifications of SIA444DJT-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67056
S11-0649-Rev. B, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
30
25
20
15
10
5
0
0
Package Limited
25
T
C
D
Current Derating*
50
- Case Temperature (°C)
is based on T
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
125
150
New Product
20
15
10
5
0
25
50
T
C
Power Derating
- Case Temperature (°C)
75
Vishay Siliconix
www.vishay.com/doc?91000
100
SiA444DJT
www.vishay.com
125
150
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