SIA444DJT-T1-GE3 Vishay, SIA444DJT-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA444DJT-T1-GE3
• Description: MOSFET,N CH,DIODE,30V,12A,SC70 PPAK
• Manufacturer: Vishay

Specifications of SIA444DJT-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.1
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
= 150 °C
0.4
T
J
25
- Temperature (°C)
I
D
= 250 μA
0.6
50
75
0.01
100
0.8
0.1
10
1
0.1
This document is subject to change without notice.
100
T
Safe Operating Area, Junction-to-Ambient
* V
J
= 25 °C
Single Pulse
Limited by R
1.0
GS
T
A
125
> minimum V
= 25 °C
V
DS
New Product
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
is specified
30
25
20
15
10
5
0
0.001
0
I
100 μs
10 ms
100 ms
1 s, 10 s
DC
D
Single Pulse Power (Junction-to-Ambient)
1 ms
= 7.4 A
On-Resistance vs. Gate-to-Source Voltage
0.01
100
2
V
GS
- Gate-to-Source Voltage (V)
0.1
4
T
Time (s)
J
= 25 °C
1
S11-0649-Rev. B, 11-Apr-11
Document Number: 67056
www.vishay.com/doc?91000
6
T
J
10
= 150 °C
8
100
1000
10