SQD19P06-60L-GE3 Vishay, SQD19P06-60L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD19P06-60L-GE3
• Description: MOSFET,N CH,W DIODE,60V,20A,TO-252
• Manufacturer: Vishay

Specifications of SQD19P06-60L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 0.046ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 46W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65158
S10-1919-Rev. B, 06-Sep-10
2000
1500
1000
500
25
20
15
10
30
24
18
12
5
0
0
6
0
0
0
0
T
C
C
rss
= 25 °C
10
5
3
T
V
T
V
V
V
V
V
C
C
GS
C
C
GS
GS
DS
DS
GS
Output Characteristics
oss
iss
= - 55 °C
= 125 °C
Transconductance
- Gate-to-Source Voltage (V)
= 10 V thru 5 V
= 3 V
-
- Drain-to-Source Voltage (V)
= 4 V
20
D
Capacitance
r
i a
10
- n
6
o t
V
GS
S -
30
o
= 2 V, 1 V
u
c r
15
e
9
V
o
40
a t l
A
g
e
= 25 °C, unless otherwise noted)
(
) V
20
12
50
25
60
15
0.25
0.20
0.15
0.10
0.05
30
24
18
12
10
0
6
0
8
6
4
2
0
0
0
0
T
I
D
C
T
= 19 A
= 125 °C
C
On-Resistance vs. Drain Current
5
= 25 °C
6
2
V
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
I
10
- Total Gate Charge (nC)
D
V
Gate Charge
GS
- Drain Current (A)
12
SQD19P06-60L
4
T
C
= 4.5 V
V
DS
= - 55 °C
15
Vishay Siliconix
= 30 V
18
6
20
V
www.vishay.com
GS
24
8
= 10 V
25
30
10
30
3