SQD19P06-60L-GE3 Vishay, SQD19P06-60L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD19P06-60L-GE3
• Description: MOSFET,N CH,W DIODE,60V,20A,TO-252
• Manufacturer: Vishay

Specifications of SQD19P06-60L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 0.046ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 46W
• Rohs Compliant: Yes

SQD19P06-60L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0.5
0.4
0.3
0.2
0.1
0.0
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
= 10 A
2
V
0
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
75
6
V
100
GS
- 60
- 64
- 68
- 72
- 76
- 80
A
Drain Source Breakdown vs. Junction Temperature
- 50
= 10 V
= 25 °C, unless otherwise noted)
T
T
J
125
J
= 150 °C
= 25 °C
8
- 25
I
D
150
= 10 mA
0
175
T
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.2
- 0.5
0.01
100
1.0
0.7
0.4
0.1
0.1
10
1
- 50
125
0
150
- 25
Source Drain Diode Forward Voltage
0.2
175
V
0
T
SD
J
= 150 °C
- Source-to-Drain Voltage (V)
0.4
25
T
Threshold Voltage
J
- Temperature (°C)
50
0.6
75
S10-1919-Rev. B, 06-Sep-10
I
D
Document Number: 65158
T
= 250 µA
100
0.8
J
= 25 °C
I
125
D
= 5 mA
1.0
150
1.2
175