SQD19P06-60L-GE3 Vishay, SQD19P06-60L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD19P06-60L-GE3
• Description: MOSFET,N CH,W DIODE,60V,20A,TO-252
• Manufacturer: Vishay

Specifications of SQD19P06-60L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 0.046ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 46W
• Rohs Compliant: Yes

THERMAL RATINGS (T
Document Number: 65158
S10-1919-Rev. B, 06-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
0.01
1
10
-2
* V
GS
T
Single Pulse
C
= 25 °C
minimum V
V
0.1
DS
Square Wave Pulse Duration (s)
Limited by
Safe Operating Area
- Drain-to-Source Voltage (V)
R
10
DS(on)
-1
GS
*
I
DM
at which R
1
Limited
BVDSS Limited
DS(on)
1
10
is specified
100
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100 µs
10
SQD19P06-60L
Vishay Siliconix
100
www.vishay.com
1000
5