SQD25N06-22L-GE3 Vishay, SQD25N06-22L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD25N06-22L-GE3
• Description: MOSFET,N CH,W DIODE,60V,25A,TO-252
• Manufacturer: Vishay

Specifications of SQD25N06-22L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.018ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 62W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 65360
S10-1850-Rev. B, 06-Sep-10
2.5
2.1
1.7
1.3
0.9
0.5
50
40
30
20
10
30
24
18
12
0
6
0
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
I
D
V
GS
= 12 A
= 10 V thru 5 V
T
6
2
C
V
0
T
DS
= - 55 °C
J
Output Characteristics
V
- Junction Temperature (°C)
GS
Transconductance
- Drain-to Source Voltage (V)
25
I
D
= 4 V
- Drain Current (A)
12
4
50
25 °C
V
GS
V
75
GS
= 3 V
18
125 °C
6
= 10 V
100
A
= 25 °C, unless otherwise noted)
V
125
GS
24
8
= 4.5 V
150
175
30
10
80
76
72
68
64
60
0.10
0.08
0.06
0.04
0.02
Drain Source Breakdown vs. Junction Temperature
- 50 - 25
30
24
18
12
6
0
0
0
0
I
D
= 10 mA
T
C
25 °C
0
= 125 °C
2
On-Resistance vs. Drain Current
T
6
V
J
GS
- Junction Temperature (°C)
Transfer Characteristics
25
- Gate-to-Source Voltage (V)
I
D
50
SQD25N06-22L
12
4
- Drain Current (A)
- 55 °C
V
Vishay Siliconix
75
GS
V
= 4.5 V
GS
18
6
100
= 10 V
125
www.vishay.com
24
8
150
175
10
30
3