SQD25N06-22L-GE3 Vishay, SQD25N06-22L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD25N06-22L-GE3
• Description: MOSFET,N CH,W DIODE,60V,25A,TO-252
• Manufacturer: Vishay

Specifications of SQD25N06-22L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.018ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 62W
• Rohs Compliant: Yes

SQD25N06-22L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
3000
2500
2000
1500
1000
0.01
100
500
0.1
10
1
0
0
0
C
C
rss
oss
Source Drain Diode Forward Voltage
10
0.2
C
V
iss
V
DS
SD
T
- Drain-to-Source Voltage (V)
J
- Source-to-Drain Voltage (V)
20
0.4
= 150 °C
Capacitance
30
0.6
- 0.3
- 0.6
- 0.9
- 1.2
0.6
0.3
A
40
0.8
0
- 50 - 25
T
= 25 °C, unless otherwise noted)
J
= 25 °C
50
1.0
0
60
1.2
Threshold Voltage
25
T
J
- Temperature (°C)
50
I
D
75
= 250 µA
100
0.25
0.20
0.15
0.10
0.05
125
I
10
D
0
8
6
4
2
0
= 5 mA
0
0
150
On-Resistance vs. Gate-to-Source Voltage
I
D
= 25 A
5
175
2
V
GS
Q
10
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
T
J
Gate Charge
= 25 °C
4
15
V
DS
= 30 V
S10-1850-Rev. B, 06-Sep-10
20
Document Number: 65360
6
T
25
J
= 150 °C
8
30
35
10