SQD25N06-22L-GE3 Vishay, SQD25N06-22L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD25N06-22L-GE3
• Description: MOSFET,N CH,W DIODE,60V,25A,TO-252
• Manufacturer: Vishay

Specifications of SQD25N06-22L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.018ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 62W
• Rohs Compliant: Yes

THERMAL RATINGS (T
Document Number: 65360
S10-1850-Rev. B, 06-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
10
1
0.01
-2
Single Pulse
T
* V
C
= 25 °C
Limited by R
GS
> minimum V
V
Square Wave Pulse Duration (s)
0.1
DS
Safe Operating Area
10
- Drain-to-Source Voltage (V)
-1
DS(on)
I
DM
GS
*
Limited
at which R
I
D
1
Limited
BVDSS Limited
DS(on)
1
10
is specified
100 µs
1 ms
10 ms
100 ms
1 s, 10 s, DC
100
10
SQD25N06-22L
100
Vishay Siliconix
www.vishay.com
1000
5