SI2305CDS-T1-GE3 Vishay, SI2305CDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2305CDS-T1-GE3
• Description: P-CHANNEL 8-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI2305CDS-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
0.15
0.12
0.09
0.06
0.03
0.00
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
5
0
0.0
8
6
4
2
0
0
0
I
D
= 4.4 A
0.5
V
V
4
DS
DS
5
Output Characteristics
Q
-- Drain-to-Source Voltage (V)
= 4 V
g
1.0
I
V
D
- Total Gate Charge (nC)
DS
-- Drain Current (A)
Gate Charge
= 2 V
V
8
V
GS
GS
1.5
10
= 2.5 V
= 5 V thru 2 V
V
GS
12
= 1.8 V
2.0
V
V
GS
DS
15
V
V
= 4.5 V
GS
= 6.4 V
GS
16
2.5
= 1.5 V
= 1 V
3.0
20
20
1800
1500
1200
900
600
300
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
5
4
3
2
1
0
- 50 - 25
0.0
0
I
D
On-Resistance vs. Junction Temperature
= 4.4 A
C
rss
C
iss
0.3
V
V
DS
GS
Transfer Characteristics
0
T
2
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
T
C
C
Capacitance
25
V
= 25 °C
0.6
oss
GS
T
T
= 4.5 V, 1.8 V
C
C
50
Vishay Siliconix
4
= 125 °C
= - 55 °C
V
GS
Si2305CDS
0.9
= 2.5 V
75
www.vishay.com
100
6
1.2
125
150
1.5
8
3