SI2305CDS-T1-GE3 Vishay, SI2305CDS-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI2305CDS-T1-GE3
• Description: P-CHANNEL 8-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI2305CDS-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2305CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
www.vishay.com/ppg?64847.
10
10
-4
-4
Duty Cycle = 0.5
0.1
0.2
0.05
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
Single Pulse
0.02
10
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-1
-- T
t
A
1
= P
S10-0720-Rev. C, 29-Mar-10
t
2
DM
Document Number: 64847
Z
100
thJA
thJA
t
t
1
2
(t)
= 175 °C/W
1
0
0
1
0