SI2305CDS-T1-GE3 Vishay, SI2305CDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2305CDS-T1-GE3
• Description: P-CHANNEL 8-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI2305CDS-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2305CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
V
T
I
D
J
SD
= 250 µA
= 150 °C
0.3
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
- Temperature (°C)
25
0.6
50
75
0.01
100
T
0.1
10
J
1
0.9
100
0.1
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
GS
T
A
= 25 °C
> minimum V
V
Limited by R
150
1.2
DS
- Drain-to-Source Voltage (V)
GS
DS(on)
at which R
1
*
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
BVDSS
Limited
30
25
20
15
10
5
0
0.001
0.0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.5
I
D
= 2 A, T
0.01
1.0
10 ms
100 ms
1 s, 10 s
1 ms
DC
V
10
GS
J
1.5
= 25 °C
- Gate-to-Source Voltage (V)
0.1
2.0
I
D
I
Time (s)
D
= 2 A, T
I
= 4.4 A, T
D
S10-0720-Rev. C, 29-Mar-10
2.5
= 4.4 A, T
1
Document Number: 64847
J
3.0
= 125 °C
J
10
= 125 °C
3.5
J
= 25 °C
4.0
100
4.5
1000
5.0