SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI4561DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
• Manufacturer: Vishay

Specifications of SI4561DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.0
3.2
2.4
1.6
0.8
0.0
0
25
Power Derating, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
8
6
5
3
2
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
S09-0220-Rev. C, 09-Feb-09
Document Number: 69730
100
125
150