SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4561DY-T1-E3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
• Manufacturer: Vishay

Specifications of SI4561DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4561DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4.0
3.2
2.4
1.6
0.8
0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
8
6
5
4
2
0
0
125
25
150
T
C
Current Derating*
- Case Temperature (°C)
50
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
T
150
A
- Ambient Temperature (°C)
50
75
S09-0220-Rev. C, 09-Feb-09
Document Number: 69730
100
125
150