SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4622DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.025
0.020
0.015
0.010
0.005
0.000
60
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
I
D
= 9.6 A
10
On-Resistance vs. Drain Current
1
9
V
DS
V
V
V
Output Characteristics
Q
GS
GS
GS
- Drain-to-Source Voltage (V)
g
20
I
- Total Gate Charge (nC)
= 10 thru 5 V
D
= 10 V
= 4.5 V
- Drain Current (A)
Gate Charge
18
2
V
30
DS
= 15 V
27
3
V
DS
40
= 24 V
V
V
GS
GS
36
4
= 4 V
= 3 V
50
New Product
60
45
5
3000
2500
2000
1500
1000
500
2.0
1.6
1.2
0.8
0.4
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
rss
D
V
GS
- 25
GS
= 8.9 A
= 4.5 V
= 10 V, I
0.7
6
V
V
DS
T
GS
Transfer Characteristics
0
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
D
iss
= 9.6 A
Capacitance
T
25
1.4
12
C
= 125 °C
50
T
T
S-81442-Rev. A, 23-Jun-08
C
C
Document Number: 68695
= - 55 °C
= 25 °C
2.1
18
75
100
2.8
24
125
150
3.5
30