SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4622DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4
3
2
1
0
0
25
Power Derating, Junction-to-Foot
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
14
12
10
8
6
4
2
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
Package Limited
125
25
T
New Product
C
Current Derating*
150
50
- Case Temperature (°C)
75
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
125
0
150
Power Derating, Junction-to-Ambient
25
T
A
- Ambient Temperature (°C)
50
75
S-81442-Rev. A, 23-Jun-08
Document Number: 68695
100
125
150