SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4622DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.035
0.030
0.025
0.020
0.015
30
24
18
12
10
6
0
8
6
4
2
0
0
0
0
I
D
= 6.7 A
2
5
On-Resistance vs. Drain Current
1
V
V
DS
V
Output Characteristics
GS
Q
GS
4
- Drain-to-Source Voltage (V)
g
= 4.5 V
10
I
D
= 10 thru 4 V
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
2
V
6
GS
15
= 10 V
V
DS
8
3
= 15 V
20
V
10
V
V
GS
DS
GS
= 2 V
= 24 V
4
= 3 V
25
12
New Product
30
14
5
1000
800
600
400
200
2.0
1.5
1.0
0.5
0.0
1.8
1.5
1.2
0.9
0.6
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
0.5
V
6
V
GS
Transfer Characteristics
DS
T
0
J
C
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
oss
- Drain-to-Source Voltage (V)
iss
V
1.0
T
GS
C
Capacitance
25
= 125 °C
12
= 4.5 V, I
T
C
= 25 °C
1.5
50
S-81442-Rev. A, 23-Jun-08
Document Number: 68695
D
= 6.4 A
V
18
GS
75
2.0
= 10 V, I
100
T
C
24
2.5
= - 55 °C
D
= 6.7 A
125
150
3.0
30