SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68695
S-81442-Rev. A, 23-Jun-08
0.001
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
0.1
0.1
0.05
Duty Cycle = 0.5
0.2
0.02
0.2
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-1
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
Vishay Siliconix
t
10
2
DM
100
Z
thJA
thJA
Si4622DY
t
t
1
2
(t)
= 90 °C/W
www.vishay.com
1000
100
7