SI6983DQ-T1-E3 Vishay, SI6983DQ-T1-E3 Datasheet - Page 2
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SI6983DQ-T1-E3
Manufacturer Part Number
SI6983DQ-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.6A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI6983DQ-T1-E3.pdf
(6 pages)
Specifications of SI6983DQ-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
1V @ 400µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.6 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6983DQ-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 869
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si6983DQ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
24
18
12
6
0
0
V
a
1
a
V
GS
DS
Output Characteristics
= 5 thru 2.5 V
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
Symbol
3
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
SD
t
rr
fs
gs
gd
2 V
r
f
g
g
4
1.5 V
V
DS
I
V
D
DS
≅ - 1 A, V
= - 10 V, V
I
F
= - 20 V, V
V
V
V
V
V
5
V
V
= - 1.0 A, dI/dt = 100 A/µs
V
DS
GS
GS
GS
I
DS
V
S
DS
DS
DS
DD
= - 1.0 A, V
Test Conditions
= - 5 V, V
= - 2.5 V, I
= - 1.8 V, I
= V
= - 4.5 V, I
= - 20 V, V
= - 5 V, I
= 0 V, V
= - 6 V, R
f = 1.0 MHz
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
GS
D
= - 400 µA
D
D
D
GS
= - 5.4 A
GS
L
= - 5.4 A
= - 4.8 A
= - 4.0 A
= ± 8 V
= - 4.5 V
= 6 Ω
= 0 V
= 0 V
J
D
= 70 °C
G
= - 5.4 A
30
24
18
12
= 6 Ω
6
0
0.0
0.5
V
- 0.40
Min.
- 20
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.0
0.019
0.024
0.033
- 0.63
Typ.
135
3.0
4.5
4.5
25
20
40
55
52
40
S-81221-Rev. D, 02-Jun-08
Document Number: 72367
T
25 °C
C
1.5
= - 55 °C
± 100
0.024
0.030
0.042
Max.
- 1.0
- 1.1
- 25
200
- 1
30
60
85
80
70
2.0
125 °C
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
2.5