SI6983DQ-T1-E3 Vishay, SI6983DQ-T1-E3 Datasheet - Page 3

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SI6983DQ-T1-E3

Manufacturer Part Number
SI6983DQ-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.6A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI6983DQ-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
1V @ 400µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.6 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6983DQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 869
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72367
S-81221-Rev. D, 02-Jun-08
0.10
0.08
0.06
0.04
0.02
0.00
100
0.1
10
6
5
4
3
2
1
0
1
0
0.0
0
V
I
V
D
Source-Drain Diode Forward Voltage
DS
GS
= 5.4 A
On-Resistance vs. Drain Current
5
= 10 V
T
5
= 1.8 V
J
0.3
= 150 °C
V
SD
Q
10
g
10
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
0.6
15
15
T
J
= 25 °C
V
V
0.9
GS
GS
20
20
= 2.5 V
= 4.5 V
1.2
25
25
30
30
1.5
3500
3000
2500
2000
1500
1000
1.60
1.40
1.20
1.00
0.80
0.60
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
GS
rss
= 5.4 A
1
= 4.5 V
4
V
V
T
0
I
GS
2
DS
J
D
- Junction T emperature (°C)
= 5.4 A
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
C
Capacitance
3
oss
8
C
5 0
iss
Vishay Siliconix
4
12
7 5
5
Si6983DQ
100
www.vishay.com
6
16
125
7
150
20
8
3

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