SI6983DQ-T1-E3 Vishay, SI6983DQ-T1-E3 Datasheet - Page 5
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SI6983DQ-T1-E3
Manufacturer Part Number
SI6983DQ-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.6A I(D),TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI6983DQ-T1-E3.pdf
(6 pages)
Specifications of SI6983DQ-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
1V @ 400µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.6 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI6983DQ-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 869
Part Number:
SI6983DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72367.
Document Number: 72367
S-81221-Rev. D, 02-Jun-08
0.01
0.1
2
1
10
- 4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
- 2
10
- 1
1
Vishay Siliconix
Si6983DQ
www.vishay.com
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