SI6983DQ-T1-E3 Vishay, SI6983DQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI6983DQ-T1-E3
• Description: TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,4.6A I(D),TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6983DQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6983DQ-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72367.
Document Number: 72367
S-81221-Rev. D, 02-Jun-08
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10
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Single Pulse
Duty Cycle = 0.5
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0.05
0.02
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Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
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Vishay Siliconix
Si6983DQ
www.vishay.com
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