SI7212DN-T1-GE3 Vishay, SI7212DN-T1-GE3 Datasheet

SI7212DN-T1-GE3

Manufacturer Part Number

SI7212DN-T1-GE3

Description

DUAL N-CHANNEL 30-V (D-S) MOSFET

Manufacturer

Vishay

Datasheets

1.SI7212DN-T1-GE3.pdf (12 pages)

2.SI7212DN-T1-GE3.pdf (12 pages)

Specifications of SI7212DN-T1-GE3

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

36 mOhm @ 6.8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.9A

Vgs(th) (max) @ Id

1.6V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 4.5V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI7212DN-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7212DN-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI7212DN-T1-GE3

Quantity:

70 000

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Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73128

S09-1815-Rev. F, 14-Sep-09

Single Pulse Avalanche Energy

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Pulse Avalanche Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free)

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

(V)

3.30 mm

PowerPAK

0.039 at V

0.036 at V

Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

DS(on)

Bottom View

(Ω)

1212-8

= 4.5 V

= 10 V

= 150 °C)

Dual N-Channel 30-V (D-S) MOSFET

3.30 mm

6.8

6.6

(A)

b, c

= 25 °C, unless otherwise noted

Steady State

L = 0.1 mH

(Typ.)

t ≤ 10 s

= 25 °C

= 85 °C

= 25 °C

= 85 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• 100 % R

• Space Savings Optimized for Fast Switching

• Compliant to RoHS Directive 2002/95/EC

• Synchronous Rectification

• Intermediate Driver

Symbol

Definition

, T

thJA

thJC

stg

N-Channel MOSFET

Tested

Typical

10 s

6.8

4.9

2.2

2.6

1.4

4.3

- 55 to 150

± 12

260

Steady State

N-Channel MOSFET

Maximum

0.69

4.9

3.5

1.1

1.3

5.4

Vishay Siliconix

Si7212DN

www.vishay.com

°C/W

Unit

°C

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