SI7212DN-T1-GE3 Vishay, SI7212DN-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI7212DN-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7212DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7212DN-T1-GE3TR

PowerPAK
Document Number: 71656
Revison: 03-May-10
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
E4
K1
L1
W
M
D
H
A
b
c
E
e
K
L
θ
Notes:
1.
2
3.
4
1
®
Inch will govern
Dimensions exclusive of mold gate burrs
Dimensions exclusive of mold flash and cutting burrs
1212-8, (SINGLE/DUAL)
E1
2
E
MIN.
0.97
0.00
0.23
0.23
3.20
2.95
1.98
0.48
3.20
2.95
1.47
1.75
0.35
0.30
0.30
0.06
0.15
0°
W
8
5
L1
MILLIMETERS
0.125 TYP.
0.47 TYP.
0.34 TYP.
0.65 BSC
0.86 TYP.
2.3 TYP.
NOM.
1.04
0.30
0.28
3.30
3.05
2.11
3.30
3.05
1.60
1.85
0.41
0.43
0.13
0.25
-
-
-
-
Z
Detail Z
MAX.
A1
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
0.51
0.56
0.20
0.36
12°
-
2
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
MIN.
0°
H
Package Information
Backside View of Single Pad
Backside View of Dual Pad
H
H
0.0185 TYP.
0.090 TYP.
0.013 TYP.
0.034 TYP.
0.005 TYP.
0.026 BSC
E3
E3
INCHES
NOM.
0.041
0.012
0.011
0.130
0.120
0.083
0.130
0.120
0.063
0.073
0.016
0.017
0.005
0.010
E2
E2
D2
D1
E4
E4
-
-
-
-
Vishay Siliconix
K
K
L
L
www.vishay.com
2
3
4
2
3
4
1
1
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
0.020
0.022
0.008
0.014
12°
-
1