SI7212DN-T1-GE3 Vishay, SI7212DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7212DN-T1-GE3
• Description: DUAL N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7212DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7212DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
0.05
0.04
0.03
0.02
0.01
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
V
Source-Drain Diode Forward Voltage
= 6.8 A
0.2
GS
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
4
3
V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
6
8
T
0.6
J
= 150 °C
0.8
12
9
T
1.0
V
J
GS
= 25 °C
16
12
= 10 V
1.2
1.4
20
15
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
I
D
rss
On-Resistance vs. Junction Temperature
= 2 A
On-Resistance vs. Gate-to-Source Voltage
V
I
D
- 25
C
GS
= 6.8 A
oss
5
= 10 V
2
V
V
DS
0
T
GS
J
I
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
D
10
- Gate-to-Source Voltage (V)
= 6.8 A
25
Capacitance
C
4
iss
50
15
Vishay Siliconix
6
75
Si7212DN
20
100
www.vishay.com
8
25
125
150
10
30
3