SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8800EDB-T2-E1
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8800EDB-T2-E1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 8V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI8800EDB-T2-E1TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 66700
S10-1046-Rev. A, 03-May-10
0.15
0.12
0.09
0.06
0.03
0.00
1.5
1.2
0.9
0.6
0.3
0.0
15
12
9
6
3
0
0.0
0
0
Gate Current vs. Gate-Source Voltage
V
0.5
GS
On-Resistance vs. Drain Current
3
3
V
V
= 1.5 V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
6
6
V
1.5
V
GS
GS
= 5 V thru 2 V
= 1.8 V
9
9
2.0
V
T
V
GS
J
GS
V
V
= 25 °C
GS
GS
= 2.5 V
12
12
= 4.5 V
2.5
= 1.5 V
= 1 V
3.0
15
15
10
10
10
10
10
10
-11
-1
-3
-5
-7
-9
5
4
3
2
1
0
8
6
4
2
0
0.0
0
0
I
D
T
Gate Current vs. Gate-Source Voltage
= 1 A
J
1
= 150 °C
0.3
3
V
V
GS
GS
Transfer Characteristics
Q
V
- Gate-to-Source Voltage (V)
g
- Gate-to-Source Voltage (V)
T
DS
- Total Gate Charge (nC)
C
2
= 125 °C
= 10 V
Gate Charge
0.6
6
V
T
DS
C
V
= 25 °C
= 5 V
3
DS
Vishay Siliconix
= 16 V
0.9
9
Si8800EDB
T
4
J
= 25 °C
T
www.vishay.com
C
1.2
12
= - 55 °C
5
1.5
15
6
3