SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 5

N-CHANNEL 20-V (D-S) MOSFET

SI8800EDB-T2-E1

Manufacturer Part Number
SI8800EDB-T2-E1
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8800EDB-T2-E1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 8V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Gate Charge Qg
5.5 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.095 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
2.8 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
SI8800EDB-T2-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8800EDB-T2-E1
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI8800EDB-T2-E1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI8800EDB-T2-E1
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D
T
A
is based on T
- Ambient Temperature (°C)
50
Current Derating*
75
J(max)
100
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
0.01
100
0.1
10
1
0.1
125
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
GS
T
A
Limited by R
> minimum V
= 25 °C
150
V
DS
- Drain-to-Source Voltage (V)
1
DS(on)
BVDSS Limited
GS
at which R
*
10
DS(on)
0.8
0.6
0.4
0.2
0.0
25
is specified
100 μs
1 ms
10 ms
100 ms, 1 s
10 s, DC
50
100
T
A
- Ambient Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si8800EDB
www.vishay.com
125
150
5

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