SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 7

• Manufacturer Part Number: SI8800EDB-T2-E1
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8800EDB-T2-E1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 8V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI8800EDB-T2-E1TR

PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø 0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5.
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66700.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
·
is location of pin 1.
Dim.
A
A
A
D
b
e
s
1
2
0.314
0.127
0.187
0.165
0.180
0.760
Min.
Mark on Backside of die
2
1
800
Recommended Land
XXX
e
Millimeters
Nom.
0.357
0.157
0.200
0.175
0.400
0.200
0.800
3
4
4 x Ø 0.205 to 0.225 Note 4
Solder Mask ~ Ø 0.215
a
0.400
0.187
0.213
0.185
0.220
0.840
Max.
4 x Ø b
0.0124
0.0050
0.0074
0.0064
0.0070
0.0299
Min.
s
D
S
D
e
S
G
Inches
0.0141
0.0062
0.0079
0.0068
0.0157
0.0078
0.0314
Nom.
Vishay Siliconix
Si8800EDB
www.vishay.com
0.0157
0.0074
0.0084
0.0072
0.0086
0.0330
Max.
7