SUD50NP04-77P-T4E3 Vishay, SUD50NP04-77P-T4E3 Datasheet

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SUD50NP04-77P-T4E3

Manufacturer Part Number
SUD50NP04-77P-T4E3
Description
COMPLIMENTARY N&P-CH 40-V (D-S) MOSF
Manufacturer
Vishay
Datasheet

Specifications of SUD50NP04-77P-T4E3

Gate Charge Qg
27 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.046 Ohms, 0.05 Ohms
Forward Transconductance Gfs (max / Min)
22 S, 20 S
Drain-source Breakdown Voltage
40 V, - 40 V
Continuous Drain Current
8 A, - 8 A
Power Dissipation
10.8 W, 24 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252-4L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
N-Channel
P-Channel
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free)
Complementary N- and P-Channel 40-V (D-S) MOSFET
V
DS
- 40
40
(V)
S
0.050 at V
0.040 at V
0.046 at V
0.037 at V
1
TO-252-4L
G
D-PAK
1
r
J
DS(on)
S
= 150 °C)
2
b, d
GS
G
GS
GS
GS
2
D
(Ω)
= - 4.5 V
= - 10 V
= 4.5 V
= 10 V
Top View
Drain Connected to
Tab
I
D
- 8
- 8
(A)
8
8
A
a
= 25 °C, unless otherwise noted
Q
Steady State
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
g
25.5
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
(Typ.)
26
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
I
P
, T
DM
I
I
SM
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
G
1
N-Channel MOSFET
Typ.
®
9.4
20
N-Channel
N-Channel
Power MOSFET
8
4.3
5.2
3.3
2.45
10.8
7
a, b, c
6.9
40
8
8
30
8
30
b, c
7
a
a
a
b, c
b, c
b, c
S
1
Max.
11.5
24
- 55 to 150
± 20
SUD50NP04-77P
G
D
Typ.
2
4.3
18
P-Channel
P-Channel
P-Channel MOSFET
- 8
- 7.4
- 4.6
5.6
3.6
11.25
15.3
- 40
- 30
- 30
- 8
- 8
- 8
Vishay Siliconix
15
24
a, b, c
b, c
b, c
a
a
b, c
a
b, c
Max.
5.2
22
S
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SUD50NP04-77P-T4E3

SUD50NP04-77P-T4E3 Summary of contents

Page 1

... D Top View Drain Connected to Tab Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SUD50NP04-77P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... ≅ Ω 4 GEN g P-Channel t d(off Ω ≅ 4 GEN ° N-Channel di/dt = 100 A/µ ° P-Channel di/ 100 A/µ SUD50NP04-77P Vishay Siliconix a Min. Typ. Max Ω P-Ch 60 110 N- P- Ω N- N- N-Ch ...

Page 4

... SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.052 0.044 0.036 0.028 0.020 Drain Current (A) D On-Resistance vs. Drain Current 0.0 2.5 5 Total Gate Charge (nC) g Gate Charge www.vishay.com 4 New Product ...

Page 5

... Time (s) Single Pulse Power, Junction-to-Case Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product 0.20 0. °C J 0.12 0.08 0.04 0.8 1.0 1.2 100 75 100 125 150 100 0.01 0.1 1 SUD50NP04-77P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.0001 ...

Page 6

... SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Package Limited 100 T - Case Temperature (°C) C Current Derating**, Junction-to-Case 100 T - Case Temperature (°C) ...

Page 7

... Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-77P Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( thJA 4 ...

Page 8

... SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.044 0.038 0.032 0.026 0.020 Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com 8 New Product = 10 thru 1.5 2 ...

Page 9

... Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product 0.12 0. °C J 0.06 0.03 1.2 1.5 120 96 = 250 µ 100 125 150 100 0.1 0. SUD50NP04-77P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.001 0.01 0 Time (s) Single Pulse Power, Junction-to-Ambient Limited ...

Page 10

... SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Package Limited 100 T - Case Temperature (°C) C Current Derating**, Junction-to-Case 100 T - Case Temperature (°C) C Power Derating, Junction-to-Case www ...

Page 11

... Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-77P Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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