SUD50NP04-77P-T4E3 Vishay, SUD50NP04-77P-T4E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50NP04-77P-T4E3
• Description: COMPLIMENTARY N&P-CH 40-V (D-S) MOSF
• Manufacturer: Vishay

Specifications of SUD50NP04-77P-T4E3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms, 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 22 S, 20 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 8 A, - 8 A
• Power Dissipation: 10.8 W, 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-4L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50NP04-77P
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.060
0.052
0.044
0.036
0.028
0.020
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0.0
0
I
D
= 5 A
On-Resistance vs. Drain Current
0.5
2.5
6
V
DS
Output Characteristics
Q
V
V
g
- Drain-to-Source Voltage (V)
GS
DS
- Total Gate Charge (nC)
I
D
= 4.5 V
= 20 V
Gate Charge
- Drain Current (A)
1.0
5.0
12
V
V
GS
DS
= 10 V
= 10 V
V
1.5
7.5
GS
18
= 10 thru 5 V
V
DS
= 30 V
10.0
4 V
2.0
24
3 V
New Product
12.5
2.5
30
800
640
480
320
160
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
C
I
D
rss
On-Resistance vs. Junction Temperature
C
= 5 A
- 25
oss
T
C
= 125 °C
1
6
V
V
Transfer Characteristics
DS
GS
T
0
T
J
C
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
= 25 °C
Capacitance
25
12
2
S-80109-Rev. B, 21-Jan-08
50
Document Number: 73989
18
3
V
75
GS
= 10 V
T
100
C
V
GS
= - 55 °C
24
4
= 4.5 V
125
150
30
5