SUD50NP04-77P-T4E3 Vishay, SUD50NP04-77P-T4E3 Datasheet - Page 5

• Manufacturer Part Number: SUD50NP04-77P-T4E3
• Description: COMPLIMENTARY N&P-CH 40-V (D-S) MOSF
• Manufacturer: Vishay

Specifications of SUD50NP04-77P-T4E3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms, 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 22 S, 20 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 8 A, - 8 A
• Power Dissipation: 10.8 W, 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-4L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
- 0.2
- 0.4
- 0.6
- 0.8
0.001
100
0.01
0.4
0.2
0.0
100
80
60
40
20
0.1
10
0
0
- 50
1
0 .
0.0
0
01
I
D
Single Pulse Power, Junction-to-Case
= 5 mA
- 25
Source-Drain Diode Forward Voltage
0.2
0.001
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
T
D
0.4
J
= 250 µA
- Temperature (°C)
25
T
J
Time (s)
= 150 °C
0.01
50
0.6
75
0.8
100
0.1
T
J
= 25 °C
1.0
125
New Product
150
1.2
1
0.20
0.16
0.12
0.08
0.04
0.01
100
100
0.1
80
60
40
20
10
0
0.01
0
1
0.0001
0
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area, Junction-to-Ambient
Limited by r
Single Pulse Power, Junction-to-Ambient
* V
GS
0.001
> minimum V
V
V
2
Single Pulse
0.1
GS
T
DS
A
DS(on)
= 25 °C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
SUD50NP04-77P
*
0.01
4
GS
Time (s)
1
at which r
Vishay Siliconix
0.1
6
DS(on)
10
www.vishay.com
T
T
I
A
is specified
D
A
= 125 °C
1
= 5 A
= 25 °C
8
100 µs
1 ms
10 ms
100 ms
10 s
DC
100
10
10
5