SIS410DN-T1-GE3 Vishay, SIS410DN-T1-GE3 Datasheet

MOSFET N-CH D-S 20V PPAK 8SOIC

SIS410DN-T1-GE3

Manufacturer Part Number
SIS410DN-T1-GE3
Description
MOSFET N-CH D-S 20V PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SIS410DN-T1-GE3

Input Capacitance (ciss) @ Vds
1600pF @ 10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Power - Max
5.2W
Mounting Type
*
Package / Case
*
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0048 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22 A
Power Dissipation
3800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
20V
On Resistance Rds(on)
4mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIS410DN-T1-GE3
Manufacturer:
ADI
Quantity:
325
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 68944
S-82483-Rev. A, 13-Oct-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SiS410DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
20
(V)
8
3.30 mm
D
7
D
0.0063 at V
0.0048 at V
6
D
PowerPAK
R
Bottom View
5
http://www.vishay.com/ppg?73257
DS(on)
D
GS
GS
J
(Ω)
1
= 150 °C)
= 4.5 V
= 10 V
b, f
®
S
1212-8
2
S
N-Channel 20-V (D-S) MOSFET
3
S
3.30 mm
I
4
D
G
35
35
(A)
Steady State
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
12.7 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• DC/DC Converter
100 % UIS Tested
- Notebook
- POL
Typical
1.9
24
g
Tested
®
Power MOSFET
G
- 55 to 150
17.8
3.2
3.8
Limit
22
± 20
2
N-Channel MOSFET
260
35
35
5.2
20
60
35
61
43
33
b, c
b, c
b, c
b, c
a
a
b, c
Maximum
D
S
2.4
33
Vishay Siliconix
SiS410DN
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
A
1

SIS410DN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: SiS410DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiS410DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 68944 S-82483-Rev. A, 13-Oct- 2.0 2.5 3 SiS410DN Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C iss 1600 1200 800 C oss 400 C rss ...

Page 4

... SiS410DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1 250 µA D 1.6 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.015 0.012 0.009 °C J 0.006 0.003 0.000 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68944 S-82483-Rev. A, 13-Oct-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiS410DN Vishay Siliconix ...

Page 6

... SiS410DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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