SIS410DN-T1-GE3 Vishay, SIS410DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIS410DN-T1-GE3
• Description: MOSFET N-CH D-S 20V PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIS410DN-T1-GE3

• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Power - Max: 5.2W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68944
S-82483-Rev. A, 13-Oct-08
0.008
0.007
0.006
0.005
0.004
0.003
0.002
60
50
40
30
20
10
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 20 A
0.5
10
V
6
GS
V
V
DS
DS
Output Characteristics
Q
V
V
= 10 thru 4 V
GS
GS
g
- Drain-to-Source Voltage (V)
= 10 V
1.0
I
- Total Gate Charge (nC)
20
D
= 4.5 V
= 10 V
Gate Charge
- Drain Current (A)
12
1.5
30
18
2.0
V
40
DS
= 16 V
V
V
GS
GS
24
2.5
50
= 2 V
= 3 V
3.0
60
30
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
I
- 25
D
= 20 A
0.5
4
V
V
Transfer Characteristics
DS
GS
V
T
0
J
GS
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
iss
= 10 V, 4.5 V
Capacitance
25
T
C
8
= 125 °C
T
C
1.5
C
50
Vishay Siliconix
oss
= 25 °C
12
SiS410DN
75
2.0
www.vishay.com
100
T
C
16
2.5
= - 55 °C
125
3.0
150
20
3