SIS410DN-T1-GE3 Vishay, SIS410DN-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIS410DN-T1-GE3
• Description: MOSFET N-CH D-S 20V PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIS410DN-T1-GE3

• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Power - Max: 5.2W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: PowerPAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiS410DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68944.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-1
- T
A
t
1
= P
S-82483-Rev. A, 13-Oct-08
t
2
Document Number: 68944
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
600
1