FS25R12KE3G Infineon Technologies, FS25R12KE3G Datasheet

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FS25R12KE3G

Manufacturer Part Number
FS25R12KE3G
Description
IGBT Modules N-CH 1.2KV 40A
Manufacturer
Infineon Technologies
Datasheet
1.FS25R12KE3G.pdf (9 pages)

Specifications of FS25R12KE3G

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
40 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 2
Ic (max)
25.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
EconoPACK™ 2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FS25R12KE3G
Manufacturer:
EUPEC
Quantity:
530
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
FS25R12KE3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FS25R12KE3G
Quantity:
55
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FS25R12KE3G
Quantity:
146
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
prepared by: MOD-D2; M. Münzer
approved: SM TM; Robert Severin
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Technische Information / technical information
T
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
V
f= 1MHz, T
f= 1MHz, T
V
V
date of publication: 2002-09-03
revision: 3.0
p
p
C
C
C
vj
c
c
c
= 1ms, T
= 1ms
R
GE
CE
CE
= 25A, V
= 25A, V
= 1mA, V
= 80°C
= 25°C
= 25°C; Transistor
= 25°C
= 0V, t
= -15V...+15V
= 1200V, V
= 0V, V
p
= 10ms, T
c
FS25R12KE3 G
GE
GE
= 80°C
CE
vj
vj
GE
= 25°C, V
= 25°C, V
= 15V, T
= 15V, T
1 (8)
= V
= 20V, T
GE
GE
= 0V, T
, T
vj
= 125°C
vj
vj
vj
vj
CE
CE
= 25°C
= 125°C
= 25°C
= 25°C
= 25V, V
= 25V, V
vj
= 25°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C, nom
I
I
C
I
I
C
P
CRM
FRM
GE(th)
Q
CEsat
CES
GES
I²t
I
GES
ISOL
CES
I
C
res
tot
F
ies
G
DB_FS25R12KE3 _G_3.0.xls
min.
5,0
-
-
-
-
-
-
-
0,064
1200
0,24
typ.
145
170
+20
2,5
1,7
2,0
5,8
1,8
25
40
50
25
50
-
-
2002-09-03
max.
2,15
400
6,5
5
-
-
-
-
A²s
mA
µC
nA
kV
nF
nF
W
V
A
A
A
V
A
A
V
V
V

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FS25R12KE3G Summary of contents

Page 1

Technische Information / technical information IGBT-Module IGBT-Modules Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power ...

Page 2

Technische Information / technical information IGBT-Module IGBT-Modules Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time ...

Page 3

Technische Information / technical information IGBT-Module IGBT-Modules Charakteristische Werte / characteristic values NTC-Widerstand / NTC-thermistor Nennwiderstand rated resistance Abweichung von R 100 deviation of R 100 Verlustleistung power dissipation B-Wert B-value Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal ...

Page 4

Technische Information / technical information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) output characteristic (typical 0,0 0,5 Ausgangskennlinienfeld (typisch) output characteristic (typical ...

Page 5

Technische Information / technical information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) transfer characteristic (typical Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical ...

Page 6

Technische Information / technical information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical Schaltverluste (typisch) Switching losses (typical FS25R12KE3 ...

Page 7

Technische Information / technical information IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 10 1 0,1 0,01 0,001 i r [K/W] : IGBT i τ [s] : IGBT i r [K/W] : Diode i τ [s] : Diode i Sicherer Arbeitsbereich ...

Page 8

Technische Information / technical information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram FS25R12KE3 G 8 (8) DB_FS25R12KE3 _G_3.0.xls 2002-09-03 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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