FS25R12KE3G Infineon Technologies, FS25R12KE3G Datasheet - Page 5

• Manufacturer Part Number: FS25R12KE3G
• Description: IGBT Modules N-CH 1.2KV 40A
• Manufacturer: Infineon Technologies

Specifications of FS25R12KE3G

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 40 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 2
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
Technische Information / technical information
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0,0
4
0,2
5
0,4
Tvj=25°C
Tvj=125°C
Tvj = 25°C
Tvj = 125°C
0,6
6
FS25R12KE3 G
0,8
5 (8)
7
1,0
V
V
GE
1,2
F
8
[V]
[V]
1,4
9
1,6
I
V
I
C
F
CE
= f(V
= f(V
= 20V
1,8
10
F
GE
DB_FS25R12KE3 _G_3.0.xls
)
)
2,0
11
2,2
2002-09-03
2,4
12