FS25R12KE3G Infineon Technologies, FS25R12KE3G Datasheet - Page 7

• Manufacturer Part Number: FS25R12KE3G
• Description: IGBT Modules N-CH 1.2KV 40A
• Manufacturer: Infineon Technologies

Specifications of FS25R12KE3G

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 40 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: Econo 2
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoPACK™ 2

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
60
50
40
30
20
10
0
r
r
i
i
0
τ
0,01
τ
[K/W] : Diode
[K/W] : IGBT
i
i
0,1
[s] : Diode
10
[s] : IGBT
1
0,001
i
200
IC,Chip
IC,Modul
9,780E-02
2,345E-03
1,520E-01
3,333E-03
400
0,01
1
FS25R12KE3 G
7 (8)
600
1,519E-01
2,820E-01
9,850E-01
3,429E-02
V
CE
2
[V]
t [s]
0,1
800
V
Z
GE
3,905E-01
2,820E-02
2,830E-01
1,294E-01
thJC
=±15V, R
Zth : IGBT
Zth : Diode
3
= f (t)
1000
1
G
=36Ω, T
DB_FS25R12KE3 _G_3.0.xls
2,198E-01
1,128E-01
8,980E-02
7,662E-01
1200
4
vj
=125°C
1400
2002-09-03
10