BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 10

• Manufacturer Part Number: BSM100GP60
• Description: IGBT Modules 600V 100A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM100GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 135 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100000
10000
1000
200
180
160
140
120
100
100
80
60
40
20
0
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
0
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
0,2
20
0,4
40
BSM100GP60
Tj = 25°C
Tj = 150°C
0,6
60
T
V
C
F
10(11)
[°C]
0,8
[V]
Rtyp
80
R = f (T)
1
100
1,2
I
F
= f (V
120
F
1,4
)
140
1,6
160
1,8
DB-PIM-10.xls